fig10

Figure 10. Flexible integrated photonic devices based on PECVD SiN^[113]: (A) Schematic diagram of the device fabrication process; (B) Photo of the device under measurement at a bending radius of 0.57 mm; (C) Normalized optical transmission spectra of flexible SiN MRR at different bending radii; (D) Normalized optical transmission spectra of the flexible SiN MRR after 100 bending cycles at R = 0.57 mm; (E) Thermal and mechanical stability tests. (A-E) are reprinted with permission from Ref.^[113], Copyright © 2023 Wiley-VCH. Mechanically-flexible wafer-scale integrated-photonics fabrication platform^[125]: (F) Stack diagrams (not to scale) depicting process flow; (G) Flexible waveguide loss; (H) Photograph of a flexible photonic chip under optical testing while bent; (I) Light output under different bending radii. (F-I) are reprinted with permission from Ref.^[125], Copyright © 2024 The Author(s). PECVD: Plasma enhanced chemical vapor deposition; MRR: micro-ring resonator; FWHM: full width at half maximum; TE: transverse electric; TM: transverse magnetic.