fig5

Figure 5. Integrated sensing-storage-computing systems and application scenarios. (A) Retina-inspired in-sensor image processing using contact-engineered IGZO optoelectronic synaptic memtransistors: (i) schematic of the biological retina and its photoreceptor arrangement; (ii) optical micrograph of the OSMT array, the corresponding 6 × 6 device array, and its initial current mapping; and (iii) evolution of the mapped image under successive electrical and optical write–erase operations, showing increased contrast between the target pattern and its background. Adapted from Ref.^[128] under the CC BY 4.0 license. Copyright 2026, The Authors; (B) Tactile perception and robotic navigation based on FST encoding: (i) Schematic of the FST tactile encoding system. (ii) Real-time classification results for autonomous vehicle status detection and smart robotic navigation using the PDTFT-based SNN hardware. Adapted from Ref.^[136] under the CC BY 4.0 license. Copyright 2025, The Authors; (C) RC for handwritten digit recognition: (i) Architecture of the RC system using IGZO-based leaky 2T dynamic random-access memory (DRAM) nodes as the physical reservoir. (ii) Confusion matrix showing the recognition results for the MNIST pattern recognition task. Reprinted with permission^[141]. Copyright 2024, American Chemical Society; (D) Analog CIM and on-chip training: (i) Circuit topology of the 6T1C synaptic cell consisting of n-type IGZO TFTs and a storage capacitor, alongside a photograph of the fabricated 8-inch wafer. (ii) Synaptic weight update curves (potentiation and depression) and memory retention characteristics of the single 6T1C device. Adapted from Ref.^[147] under the CC BY 4.0 license. Copyright 2023, The Authors. IGZO: Indium gallium zinc oxide; OSMT: optoelectronic synaptic memtransistor; FST: first-spike-timing; PDTFT: pressure-sensitive dual-TFT; SNN: spiking neural network; RC: reservoir computing; 2T: two-transistor; DRAM: dynamic random-access memory; MNIST: Modified National Institute of Standards and Technology; CIM: in-memory computing; TFTs: thin-film transistors; LECTS: light-electric coupling synaptic transistor; EPSC: excitatory postsynaptic current; PPF: paired-pulse facilitation; WLU: word line upper; BLU: bit line upper; GND: ground; WLD: word line lower; BLD: bit line lower; ADC: analog-to-digital conversion.