fig4
Figure 4. Material platforms for fiber memristors. (A) PDA/Al/cotton[58]; (B) pEGDMA/Al/cotton[43]; (C) Pt/CuZnS/Ag[42]; (D) Pt/CsPbBr3/Ag[61]; (E) PLA/Ag/MXene/Pt[77]; (F) Au/P(VDF-TrFE)/Ag[79]; (G) Ag/MoS2/HfAlOx/CNT[10]; (H) Non-conductive Kevlar/Conductive Kevlar fibers[81]; (i) CNT/SEBS-IM/SEBS-SN/CNT ionic fiber[83]. Reproduced with permission from Ref.[58]. Copyright 2019, WILEY-VCH. Reproduced with permission from Ref.[43]. Copyright 2017, American Chemical Society. Reproduced with permission from Ref.[42]. Copyright 2023, WILEY-VCH. Reproduced with permission from Ref.[61]. Copyright 2022, WILEY-VCH. Reproduced with permission from Ref.[77]. Copyright 2024, WILEY-VCH. Reproduced with permission from Ref.[79]. Copyright 2019, American Chemical Society. Reproduced from Ref.[10] under the CC BY license. Reproduced from Ref.[81] under the CC BY license. Reproduced from Ref.[83] under the CC BY license. PDA: Polydopamine; pEGDMA: poly(ethylene glycol) dimethacrylate; PLA: polylactic acid; P(VDF-TrFE): poly(vinylidene fluoride-trifluoroethylene); CNT: carbon nanotube; SEBS-IM: poly(styrene-b-(ethylene-co-butylene)-b-styrene grafting 3-hexylimidazolium groups; SEBS-SN: poly(styrene-b-(ethylene-co-butylene)-b-styrene grafting sodium sulfonate groups; QD: quantum dot; TE: top electrode; BE: bottom electrode; GND: ground.
