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A facile in-situ reaction method for preparing flexible Sb2Te3 thermoelectric thin films
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Soft Sci 2023;3:[Accepted].
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Abstract
Inorganic p-type Sb2Te3 flexible thin films with eco-friendly and high thermoelectric performance have attracted wide research interest and potential for commercial applications. This study employs a facile in-situ reaction method to prepare flexible Sb2Te3 thin films by rationally adjusting the synthesized temperature. The prepared thin films show good crystallinity, which enhances the electrical conductivity of ~1440 S cm−1 due to the weakened carrier scattering. Simultaneously, the optimized carrier concentration through adjusting the synthetized temperature causes to the intermediate Seebeck coefficient. Consequently, a high power factor (16.0 μW cm−1 K−2 at 300 K) is achieved for Sb2Te3 flexible thin films prepared at 623 K. Besides, the flexible thin films also exhibit good flexibility due to the slight change in resistance after bending. This study specifies that the in-situ reaction method is an effective route to prepare Sb2Te3 flexible thin films with high thermoelectric performance.
Keywords
Thermoelectric, Sb2Te3, flexible thin film, thermal diffusion
Cite This Article
Ao D, Wu B, Bushra J, Sun B, Yang D, Zhong Y, Zheng Z. A facile in-situ reaction method for preparing flexible Sb2Te3 thermoelectric thin films. Soft Sci 2023;3:[Accept]. http://dx.doi.org/10.20517/ss.2023.34
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© The Author(s) 2024. Open Access This article is licensed under a Creative Commons Attribution 4.0 International License (https://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, sharing, adaptation, distribution and reproduction in any medium or format, for any purpose, even commercially, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made.
