fig7

From: Growth redox conditions and interface effects govern polarization switching speed, retention and reliability in epitaxial Hf_0.5Zr_0.5O₂ thin films

Growth redox conditions and interface effects govern polarization switching speed, retention and reliability in epitaxial Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> thin films

Figure 7. Correlation between switching dynamics and reliability metrics as a function of remanent polarization. (A) Positive switching time as a function of P_r. (B) Characteristic E₀ as a function of P_r. (C) Retention expressed as P_r (10⁵ s)/P₀ as a function of P_r. (D) Schematic illustration of the larger number of nucleation sites promoting faster switching in films containing monoclinic/orthorhombic grain boundaries. (E) log-log dependence of E₀ on thickness; the slope is close to 1 in all cases. (F) Sketch of the enhanced in-plane depolarization field E_dep in films with a larger presence of monoclinic/orthorhombic phase fraction. Black arrows labeled P denote the polarization direction.