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fig6

From:  Growth redox conditions and interface effects govern polarization switching speed, retention and reliability in epitaxial Hf0.5Zr0.5O2 thin films
Growth redox conditions and interface effects govern polarization switching speed, retention and reliability in epitaxial Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> thin films

Figure 6. Retention performance of the three series, expressed as the remanent polarization extrapolated to 10 years and normalized to the initial value as a function of film thickness. Filled and open symbols correspond to the positive and negative polarization states, respectively.

Microstructures
ISSN 2770-2995 (Online)
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