fig5

From: Growth redox conditions and interface effects govern polarization switching speed, retention and reliability in epitaxial Hf_0.5Zr_0.5O₂ thin films

Growth redox conditions and interface effects govern polarization switching speed, retention and reliability in epitaxial Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> thin films

Figure 5. Weibull statistical distributions of the E_BD for the three series: (A) STO(001) O₂, (B) STO(110) O₂, and (C) STO(110) O₂/Ar. (D) Thickness dependence of the E₀ extracted from the Weibull fitting for the three series of samples.

Microstructures

ISSN 2770-2995 (Online)

[email protected]

Navigation

Sitemap

Navigation

Sitemap

Committee on Publication Ethics

https://members.publicationethics.org/members/microstructures

Portico

All published articles are preserved here permanently:

https://www.portico.org/publishers/oae/

Committee on Publication Ethics

https://members.publicationethics.org/members/microstructures

Portico

All published articles are preserved here permanently:

https://www.portico.org/publishers/oae/

Strategic Collaborator

Follow OAE

Privacy Cookies Terms of Service