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fig4

From:  Growth redox conditions and interface effects govern polarization switching speed, retention and reliability in epitaxial Hf0.5Zr0.5O2 thin films
Growth redox conditions and interface effects govern polarization switching speed, retention and reliability in epitaxial Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> thin films

Figure 4. Thickness dependence of the switching parameters extracted from the NLS model fitting. (A) Characteristic switching time (log(t1)) as a function of film thickness and (B) width of distribution (w) of the switching time for the three series.

Microstructures
ISSN 2770-2995 (Online)
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