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fig3

From:  Growth redox conditions and interface effects govern polarization switching speed, retention and reliability in epitaxial Hf0.5Zr0.5O2 thin films
Growth redox conditions and interface effects govern polarization switching speed, retention and reliability in epitaxial Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> thin films

Figure 3. (A-C) ∆P as a function of writing pulse width (tw) measured by PUND for the three sample series: (A) STO(001) O2, (B) STO(110) O2, and (C) STO(110) O2/Ar. Dashed lines correspond to fits using the nucleation-limited switching (NLS) model. (D-F) Corresponding Lorentzian distributions of local switching times extracted from the NLS fitting for the three series of samples.

Microstructures
ISSN 2770-2995 (Online)
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