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fig2

From:  Growth redox conditions and interface effects govern polarization switching speed, retention and reliability in epitaxial Hf0.5Zr0.5O2 thin films
Growth redox conditions and interface effects govern polarization switching speed, retention and reliability in epitaxial Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> thin films

Figure 2. (A-C) Polarization-electric field (P-E) hysteresis loops measured using the PUND method for the three series of samples: (A) STO(001) O2, (B) STO(110) O2, and (C) STO(110) O2/Ar. (D) Thickness dependence of the remanent polarization (Pr) for the three series of samples. (E) Thickness dependence of the coercive field (Ec). (F) Thickness dependence of the coercive field distribution parameter δ extracted from the fitting of the hysteresis loops.

Microstructures
ISSN 2770-2995 (Online)
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