fig1

Growth redox conditions and interface effects govern polarization switching speed, retention and reliability in epitaxial Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> thin films

Figure 1. (A) χ-2θ diffraction images around the o-(111) reflection for HZO films of the indicated thickness for the three series: STO(001) O2, STO(110) O2, and STO(110) O2/Ar. The orthorhombic (o) and monoclinic (m) reflections are indicated. (B) Area ratio of the m-(-111) diffraction peak with respect to the o-(111) peak, extracted from the χ-integrated 2θ patterns, as a function of film thickness for the three series of samples. (C) Schematic illustration of the thickness-dependent phase evolution of epitaxial HZO films, showing the stabilization of the orthorhombic phase in the ultrathin regime and the progressive appearance of the monoclinic phase with increasing thickness.

Microstructures
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