fig5

Control of magnetic anisotropy in epitaxial SrRuO<sub>3</sub> via oxygen octahedral engineering

Figure 5. (A) The anomalous Hall effect (AHE) hysteresis loops for the SRO films at 10 K. Note that the OHE background and magnetoresistance contribution have already been subtracted; (B) The coercivity field of the AHE data and the out-of-plane M-H loops as a function of the film thickness; (C) Depiction of the saturation magnetization and saturation AHE resistivity as a function of the film thickness. SRO: SrRuO3; AHE: anomalous Hall effect; OHE: ordinary Hall effect; HZ: out-of-plane magnetic field; uc: unit cells.

Microstructures
ISSN 2770-2995 (Online)

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