fig4

Design of metasurface uni-traveling-carrier photodetector with large area, high speed and high quantum efficiency

Figure 4. (A) Electric field distribution and (B) energy-band diagram for 0-, 2-, and 4-V reverse bias; (C) 3-dB-ftr vs. reverse bias; (D) Capacitance per unit device junction area vs. reverse bias. The accompanying figure shows the 3-dB-fRC calculated using formula 6. fRC: frequency of resistor-capacitor bandwidth; ftr: frequency of carrier transit time bandwidth.

Microstructures
ISSN 2770-2995 (Online)

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Portico

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