fig8

Figure 8. SEM micrographs of the FMP zone of L-PBFed AlSi10Mg with substrate temperature of 35 °C (A) and 200 °C (B); of the CMP zone with substrate temperature of 35 °C (C) and 200 °C (D); of the HAZ zone with substrate temperature of 35 °C (E) and 200 °C (F); Focused ion beam (FIB)/SEM tomographies of Si-rich eutectic network of FMP (G); CMP (H) and HAZ (I) zones with substrate temperature of 35 °C; of Si-rich phases of FMP (J); CMP (K) and HAZ (L) zones with substrate temperature of 200 °C^[62].