fig17

Figure 17. The I-V characteristic curves of (A) Ti/TiO₂/Si and (B) Ti/TiO₂/HfO₂/Si devices. (C) Recognition accuracy of Ti/TiO₂/Si devices and Ti/TiO₂/HfO₂/Si devices^[142]. Reprinted from Ref.^[142], Copyright (2020), with permission from Elsevier. (D) W/TiO₂/HfO₂/TaN devices withstand more than 10⁷ switching cycles. (E) W/TiO₂/HfO₂/TaN devices remain unchanged for more than 10⁴ s at 125 °C. (F) LTP, LTD, and STDP behaviors of W/TiO₂/HfO₂/TaN devices^[143]. Reprinted from Ref.^[143], Copyright (2022), with permission from Elsevier. (G) Enhancement and suppression characteristics of Pt/Ta₂O₅/HfO₂/TiN devices. (H) PPD test results. (I) Recognition accuracy of the Fashion MNIST dataset^[108]. Reprinted from Ref.^[108], Copyright (2021), with permission from Elsevier.