fig11
Figure 11. (A) Size effects in fluorite-structure ferroelectrics[96]. Reprinted from Ref.[96], with permission from Springer Nature. (B) PEALD process for growing HZO films on a Si wafer[103]. Reprinted from Ref.[103], Copyright (2023), with permission from Elsevier (C) TiN/HZO/TiN and (D) RuO2/HZO/RuO2 are shown[65]. Reprinted from Ref.[65], with permission from the Royal Society of Chemistry.
