fig4

Stoichiometry- and lattice-tunable MoN<sub>x</sub> as a novel electrode platform for ferroelectric Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> capacitors

Figure 4. Crystallographic structural analysis of HZO thin films. (A) Grazing-incidence X-ray diffraction patterns obtained from HZO thin films deposited on Mo and MoNx electrodes, along with reference patterns for Mo, molybdenum nitrides, and HZO polymorphs. The inset shows the full-intensity-scale pattern for the Mo electrode condition, illustrating the complete height of the Mo (110) peak. Structural parameters extracted from the XRD profiles, including (B) the monoclinic (M) phase fraction and (C) the 2θ position of the orthorhombic/tetragonal (O/T) peak near 30.5°; (D) Azimuthal intensity profiles of the orthorhombic 111 (111O) and 002 (002O) reflections were derived from grazing-incidence wide-angle X-ray scattering analysis. Data within the missing-wedge region were obtained by extrapolation using a Gaussian function; (E) Average grain radius determined for HZO films under each electrode condition. HZO: Hf0.5Zr0.5O2.

Microstructures
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