fig17
Figure 17. (A) Dielectric permittivity for single-layer and compositionally graded heterostructures. (B) Sinusoidal temperature variation applied to extract the pyroelectric responses of single-layer PZT20:80 and compositionally up-graded and down-graded heterostructures. (A and B) Reproduced with permission[106]. Copyright 2013, American Chemical Society; (C) Dielectric properties of compositionally graded PZT films with an AC excitation voltage of 500 mV. Reproduced with permission[107]. Copyright 2025, Springer Nature; (D) Cross-sectional HAADF-STEM image of the top 72 nm of a compositionally graded heterostructure. (E) Wide-range temperature-stable dielectric permittivity. (D-E) Reproduced with permission[108]. Copyright 2017, Springer Nature; (F) Ferroelectric hysteresis loop of compositionally graded PbZr1-xTixO3 heterostructures and corresponding amplitude and phase images from band-excitation switching spectroscopy at various stages (a-f) of ferroelectric switching. Reproduced with permission[109]. Copyright 2016, Springer Nature. HAADF-STEM: High-angle annular dark-field-scanning transmission electron microscopy; PZT: PbZrxTi1-xO3.
