fig15

Figure 15. (A) Mechanisms for the self-polarization of (Bi,Sm)FeO₃ films. (B) Resistive-switching behavior of SrRuO₃/(Bi,Sm)FeO₃/Pt memristors. I-V characteristics of BFO devices. (C) Schematic energy band diagrams illustrating the variation in the Schottky barriers of back-to-back diodes in polarized down and up states. (A-C) Reproduced with permission^[96]. Copyright 2023, American Chemical Society; (D) Interpretation of the evolution of polarization. (E) Influence of the buffer termination on the evolution of polarization. (D and E) Reproduced with permission^[103]. Copyright 2023, Wiley-VCH GmbH. LSMO: La_0.67Sr_0.33MnO₃; RT: room temperature; BFO: BiFeO₃; SRO: SrRuO₃.