fig5

Numerical simulation and twinning evolution mechanism of the deep through silicon via electroplated copper

Figure 5. Effect of current density on the microstructure at different regions of deep TSV and an additive concentration ratio of 1:10: (A) average grain size; (B) aspect ratio of grain; (C) frequency of Σ3 twin boundaries; (D) frequency of all twin boundaries. TSV: Through silicon via.

Microstructures
ISSN 2770-2995 (Online)

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