fig10

Numerical simulation and twinning evolution mechanism of the deep through silicon via electroplated copper

Figure 10. Schematic illustration of the matrix→9R→twin transformation process, showing that under the action of Shockley partial dislocations, the introduction of the 9R structure prior to twinning can lead to twin thickening and upward migration of the 9R structure. FCC: Face-centered cubic.

Microstructures
ISSN 2770-2995 (Online)

Portico

All published articles are preserved here permanently:

https://www.portico.org/publishers/oae/

Portico

All published articles are preserved here permanently:

https://www.portico.org/publishers/oae/