fig6

Figure 6. Mechanisms of Plasmon-Induced HCI and Resulting IPCE Enhancement in Metal-Semiconductor. (A) n-type semiconductor junction; (B) p-type semiconductor junction^[97]. Copyright 2013, reproduced with permission. Published by the American Chemical Society; (C) Band alignment of Cu/TiO₂, emphasizing band excitation processes^[60]. Copyright 2019, published by the Royal Society of Chemistry; (D) IPCE-photon energy dependence with surface plasmon enhancement region and Fowler law fitting^[105]. Copyright 2011, published by the American Chemical Society; (E) Wavelength-resolved IPCE and absorption spectra of Au nanoparticles and Au nanorods^[106]. Copyright 2013 American Chemical Society; (F) Absorption spectrum decomposition of Au/TiO₂ into LSPR and interband contributions^[107]. Copyright 2025 American Chemical Society. CB: Conduction band; E_C: conduction band edge; E_F: Fermi Leve; E_V: valance band edge; VB: valance band; IPCE: incident photon-to-current efficiency; NP: nano-particle; NR: nano-rod; LSPR: localized surface plasmon resonance.