fig7
Figure 7. (A) Schematic structure of GaN p-i-n APDs grown on bulk GaN substrates based on Mesa-ET (left) and MHP-ET (right); (B) I-V characteristics of GaN p-i-n APDs grown on bulk GaN substrates based on Mesa-ET (left) and MHP-ET (right)[90]. GaN: gallium nitride; p-i-n: positive-intrinsic-negative; APD: avalanche photodetector; ET: edge termination; MHP-ET: I-V: current-voltage.
