fig5

Figure 5. (A) Schematic diagram of the effect of lattice softening on electrical transport properties of thermoelectric materials; (B) Temperature-dependent electrical transport properties for Cu_3-3xAg_3xSbSe₄ (x = 0, 0.02, 0.03, 0.04, 0.05, 0.06) samples: electrical resistivity; (C) Room temperature carrier concentration n_h and carrier mobility μ as a function of the Ag doping content. Copyright 2019, Royal Society of Chemistry^[90]; (D) Top and side views of the crystal structure of 1T-SnSSe monolayer. The Heff in the side view represents the effective thickness of the 1T-SnSSe monolayer; (E) The calculated bandgaps (including the HSE06 + SOC and PBE + SOC methods) as a function of biaxial tensile strains ranging from 0% to 8% and the calculated Sn-S/Sn-Se bond lengths versus the lattice parameters corresponding to the biaxial tensile strains. Copyright 2022, Elsevier^[92]. HSE06: Heyd-scuseria-ernzerhof; SOC: spin-orbital coupling effect; PBE: perdew-burke-ernzerhof.