fig6

Figure 6. FE-dependent photoresponse and optoelectronic logic functions of CIPS/AIPS VFSH device. (A) Schematic diagram of a CIPS/AIPS photodetector; (B and C) Laser-induced carrier spatial distribution of CIPS/AIPS device in ↑↑ and ↓↓ states; (D) Normalized photocurrent ($$ \tilde{I} $$_ph) of CIPS/AIPS device in ↑↑ and ↓↓ states as a function of photon energy (E_ph); (E) Positive and negative photoresponse of CIPS/AIPS device in ↑↑ and ↓↓ states with increasing optical power density; (F) The normalized photocurrent ratio (|I_↓↓/I_↑↑|) of CIPS/AIPS device as a function of photon energy. I_↓↓ and I_↑↑ represent the I_ph of the device in ↓↓ and ↑↑ states, respectively; (G) Schematic diagram of a complementary phototransistor consisting of two CIPS/AIPS devices in ↑↑ state and two optical inputs (A and B); (H) Optical input sequence and corresponding output photocurrent and logic sequence of the phototransistor in (G) at E_ph = 2.6 eV and P_in = 2.0 W/m²; (I) Schematic diagram of a complementary phototransistor consisting of two CIPS/AIPS devices in ↑↑ and ↓↓ states; (J) Optical input sequence and corresponding output photocurrent and logic sequence of the phototransistor in (I) at E_ph = 2.6 eV and P_in = 2.0 W/m². FE: Ferroelectric; CIPS/AIPS: CuInP₂S₆/AuInP₂S₆; VFSH: vdW FE semiconductor heterojunction.