fig6

Figure 6. (A) PCM-based photonic neural networks; (B) Sketch of GSS3T2-based FE device; (C) Sketch of GSS3T2-based DS device. The thickness h_PCM, diameter D_PCM and the gap between two neighboring PCM disks denoted as 14, 450 and 50 nm, respectively; The transmission spectra of c- and a-GSS3T2 integrated on (D) the FE waveguide device and (E) the DS waveguide device; (F) Reflection and scattering spectra of the two waveguide devices using crystalline GSS3T2. PCM: Phase-change material; GSS3T2: Ge₂Sb₂Se₃Te₂; FE: full-etched; DS: disk-shaped.