fig5

Multiscale simulations of Ge–Sb–Se–Te phase-change alloys for photonic memory applications

Figure 5. (A) Transmission spectra of the SE waveguides at the telecommunication wavelength bands (1,500-1,600 nm) from FDTD simulations imported with DFT-simulated and experimentally measured refractive index data; (B) The simulated electric-field distributions of the GSS3T2 SE waveguides at 1,550 nm, as marked in (A). SE: Shallow-etched; FDTD: finite-difference time-domain; DFT: density functional theory; GSS3T2: Ge2Sb2Se3Te2.

Journal of Materials Informatics
ISSN 2770-372X (Online)
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