fig6

Neuroevolution potential for thermal transport in silicon carbide

Figure 6. The computed thermal conductivity of 4H-SiC models containing various stacking faults along the (A) planar and (B) axial directions; (C) The thermal resistance induced by stacking faults evaluated using Equation (1) along the axial direction. SiC: Silicon carbide.

Journal of Materials Informatics
ISSN 2770-372X (Online)
Follow Us

Portico

All published articles are preserved here permanently:

https://www.portico.org/publishers/oae/

Portico

All published articles are preserved here permanently:

https://www.portico.org/publishers/oae/