fig1

Figure 1. (A) Schematic illustration of the ultralow-doping lattice design strategy for the preparation of high-performance p-type and n-type PbSe; (B) Annular bright-field (ABF) scanning transmission electron microscopy and a comparative analysis of the magnified annular dark-field (ADF) characterization of PbSe + xCr crystals; (C) Maximum cooling temperature difference (ΔT_max) versus the difference in the absolute Seebeck coefficients (|S_p| - |S_n|) for PbSe-based thermoelectric coolers in this work and previously reported lead chalcogenide devices at a hot-side temperature of 300 K; (D). Simulated maximum cooling temperature difference (ΔT_max) as a function of the Seebeck coefficients of p-type and n-type PbSe, obtained by COMSOL Multiphysics based on the experimentally measured properties of the n-type and p-type PbSe legs. This figure is reprinted with permission from^[4]. Copyright © 2026, AAAS. CBM: Conduction band minimum; VBM: valence band maximum; TEC: thermoelectric cooling.