fig6

Figure 6. Comparison between experimental and calculated mobility parameter assuming acoustic phonon scattering, alloy scattering and grain boundary scattering for the sample Mg_1.95Si_0.233Sn_0.7Sb_0.067-I. The deformation potential was set at 11 eV, the alloy scattering potential at 0.5 eV and the results for four different barrier heights are shown: 0 meV (no GB scatter), 100 meV and 131 meV (reference values, used by Sankhla et al.^[57] in their study) and 60 eV, resulting in a good fit to the experimental data. The inset represents merged low-temperature data and high temperature data of electrical conductivity of Mg_1.95Si_0.233Sn_0.7Sb_0.067-I. The low-temperature data were fitted to the high-temperature ones with a constant factor assuming device uncertainty of 10% to fit the high temperature data for further modeling of the scattering parameters.