fig6
Figure 6. Comparison between experimental and calculated mobility parameter assuming acoustic phonon scattering, alloy scattering and grain boundary scattering for the sample Mg1.95Si0.233Sn0.7Sb0.067-I. The deformation potential was set at 11 eV, the alloy scattering potential at 0.5 eV and the results for four different barrier heights are shown: 0 meV (no GB scatter), 100 meV and 131 meV (reference values, used by Sankhla et al.[57] in their study) and 60 eV, resulting in a good fit to the experimental data. The inset represents merged low-temperature data and high temperature data of electrical conductivity of Mg1.95Si0.233Sn0.7Sb0.067-I. The low-temperature data were fitted to the high-temperature ones with a constant factor assuming device uncertainty of 10% to fit the high temperature data for further modeling of the scattering parameters.