fig2

Poorer is better: towards robust, high performance Mg<sub>2</sub>(Si,Sn) thermoelectric material by avoiding excess Mg

Figure 2. Low and high magnification BSE-SEM images of (A and C) Mg1.95Si0.3Sn0.7, (B and D) Mg1.95Si0.233Sn0.7Sb0.067. The BSE-SEM images show the microstructure of undoped and doped Mg-poor material. One can see that globular, sub-structured inclusions are visible in both samples. Those inclusions are Si-rich Mg2X precipitated. Some contrast is also visible in both matrixes. Similar contrast is also visible in Mg-rich material as shown in Figure 2. Such contrast is due to slight Si:Sn variations. EDS mapping of the Si-rich regions are given in Supplementary Figure 2. EDS: Energy dispersive X-ray spectroscopy; BSE-SEM: backscattered electron-scanning electron spectroscopy.

Energy Materials
ISSN 2770-5900 (Online)
Follow Us

Portico

All published articles are preserved here permanently:

https://www.portico.org/publishers/oae/

Portico

All published articles are preserved here permanently:

https://www.portico.org/publishers/oae/