fig3

Figure 3. Structure and output performance of MoS₂-PVA-based TENGs. (A) Device structure. (B) TENG working mechanism. (C-E) Output performance of 0-4 wt.% MoS₂-PVA ES films: (C) open-circuit voltage; (D) short-circuit current density; (E) summary of voltage, current density, and charge density. (F-H) Output performance of 0-4 wt.% MoS₂-PVA spin-coated films: (F) open-circuit voltage; (G) short-circuit current density; (H) summary of voltage, current density, and charge density. (I) COMSOL simulated potential distribution of spin-coated and ES MoS₂-PVA films (0 and 2 wt.%).