fig3
Figure 3. J-V characteristic of GaAs/CNT@MoS2 heterojunction under (A) illumination and (B) dark conditions; (C) J-V characteristic of GaAs/MoS2, GaAs/CNT and GaAs/CNT@MoS2 heterojunction; (D) EQE curves, (E) PCE retention and (F) J-V curves of GaAs/CNT@MoS2 heterojunction with/without MoO3 ARC. GaAs: Gallium arsenide; J-V: current density-voltage; CNT: carbon nanotube; EQE: external quantum efficiency; PCE: power conversion efficiency; ARC: anti-reflection coating.
