fig7

Figure 7. Electrochemical characterization of S-ATrGO/CG//S-ATrGO/CG. (A) CV curves of scan rates ranging from 1 to 25 mV s^-1; (B) Specific capacitance from CV plots with variation of scan rates; (C) Differentiation of capacitive and diffusion-controlled contribution from CV curves at 1 mV s^-1 for SSC; (D) Contributions of capacitive and diffusion-controlled charge storage at various scanning rates; (E) GCD curves at different current density; (F) The specific capacitance retention and coulombic efficiency of SSC with 7,500 cycling numbers. EDLC: Electric double layer capacitance; CV: cyclic voltammetry; CG: commercial graphene; ATGO: acid-treated graphene oxide; S-ATrGO: sulfuric acid-treated reduced graphene oxide; NS: non-slit; GCD: galvanostatic charge-discharge; SSC: cell symmetric supercapacitor; RHE: reversible hydrogen electrode.