fig6

Figure 6. (A) CV curves of S-ATrGO/CG₀, S-ATrGO/CG₃₀, S-ATrGO/CG₇₀, S-ATrGO/CG₇₅, and S-ATrGO/CG₈₀ at scan rate of 25 mV s^-1; (B) Specific capacitance from CV plots with variation of scan rates; (C) Contributions of capacitive and diffusion-controlled charge storage at various scanning rates; (D) Comparison of GCD curves at a current density of 5 mA cm^-2; (E) The Nyquist plots measured in a frequency range between 0.01 and 10⁵ Hz; (F) The specific capacitance retention with 20,000 cycling numbers. CG: commercial graphene; ATGO: acid-treated graphene oxide; S-ATrGO: sulfuric acid-treated reduced graphene oxide; NS: non-slit; GCD: galvanostatic charge-discharge; CV: cyclic voltammetry; GCD: galvanostatic charge-discharge; RHE: reversible hydrogen electrode.