Topic: Microstructural Tailoring in Metal Oxide Semiconductors

The increasing demand for high-performance and highly reliable metal oxide semiconductors (MOS) in electronics, energy conversion, sensing, and catalysis is driving the need to develop novel materials with precise microstructural control. Advances in synthesis, defect engineering, and interface design are enabling MOS with enhanced charge carrier mobility, spin transport, optical response, catalytic activity, and stability.

This Special Issue aims to highlight recent progress in the microstructural tailoring of metal oxide semiconductors. We invite contributions focused on composite/heterostructure design, multi-style defect engineering, phase and interface engineering, nanostructuring, and emerging mechanisms that improve functional performance. We also encourage studies exploring unique material responses to external stimuli under practical service conditions, including elevated temperatures, radiation exposure, gaseous environments, and strong magnetic fields. Studies employing modeling, simulation, or advanced characterization techniques to reveal the relationships between processing methods, microstructure, and properties are also highly encouraged.

By bringing together interdisciplinary research, this Special Issue seeks to accelerate the development of next-generation metal oxide semiconductors for applications in electronics, optics, energy conversion, sensing, and catalysis. We invite contributions of original research and review articles that showcase the depth and breadth of current progress in the field of metal oxide semiconductors.

Metal oxide semiconductors, microstructural tailoring, defect engineering, interface/heterostructure, nanostructuring, microstructure-property relationships, advanced characterization, modeling and simulation, radiation effects