Topic: Atomic and Interfacial Engineering of Transition Metal Dichalcogenides

Transition metal dichalcogenides (TMDs) are a versatile class of two-dimensional materials that demonstrate unique catalytic, electronic, and optical properties. Through the combination of different transition metals and chalcogens, TMDs can exhibit magnetic, superconducting, or semiconducting properties. These properties make TMDs encouraging candidates for use in electronics, optoelectronics, sensing, catalysis and biomedicine.

Advancing atomic and interfacial engineering is driving progress in diverse fields, from high-mobility transistors and flexible electronics to ultrasensitive sensors, efficient electrocatalysts, and biomedical platforms. Particularly, introducing organic molecules and polymers enables the passivation of surface defects, improves interfacial contact, and enhances charge transport, offering a versatile strategy to optimize device performance.

This Special Issue aims to guide the showcase of cutting-edge research on atomic structures and interfacial phenomena of TMDs, thereby promoting their design and application in next-generation technologies. Recent advances in atomic and interfacial engineering of TMDs are mainly discussed, including synthesis, defect and heterostructure design, organic and polymeric modifications, advanced characterization, and computational modeling.

We believe that this collection will present current, interesting and significant results that could be beneficial for young researchers and leading experts in the field.

Transition metal dichalcogenides (TMDs), atomic engineering, interfacial engineering, defect passivation, organic and polymer modifications, heterostructures, advanced characterization