fig8

Figure 8. (A) Schematic structure of the new p-i-n type GaN-based APDs with p-In_0.05Ga_0.95N layer replacing the p-GaN layer. (B) Electric field distributions in GaN APDs (left) and GaN APDs with p-In_0.05Ga_0.95N (right). (C) The SAM structure of the conventional GaN APDs (left) and the SAM structures of the designed ScGaN APDs (right). p-i-n: Positive-intrinsic-negative; GaN: gallium nitride; APD: avalanche photodetector; SAM: separated absorption multiplication.