fig2

Preparation and research progress of GaN-based avalanche photodetectors

Figure 2. The avalanche breakdown characteristic, structure section, and some examples of avalanche photodetectors. Vbr: Breakdown voltage; GaN: gallium nitride; p-i-n: positive-intrinsic-negative; APD: avalanche photodetector; SAM: separated absorption multiplication.

Microstructures
ISSN 2770-2995 (Online)

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