fig11

Preparation and research progress of GaN-based avalanche photodetectors

Figure 11. (A) Schematic structure of SAM APD based on Au/WSe2/Ge[113]. (B) I-V curves for different wavelengths of illumination[113]. (C) Schematic view (left) and cross-sectional view of the APDs (right)[122]. SAM: separated absorption multiplication; APD: avalanche photodetector; I-V: current-voltage.

Microstructures
ISSN 2770-2995 (Online)

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