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fig10

From:  Preparation and research progress of GaN-based avalanche photodetectors
Preparation and research progress of GaN-based avalanche photodetectors

Figure 10. (A) Schematic structure of high/low Al content AlGaN SAM sun-blind UV APDs containing the n-type layer; (B) electric field distribution in high/low Al content AlGaN SAM APDs[99]. GaN: Gallium nitride; SAM: separated absorption multiplication; UV: ultraviolet; APD: avalanche photodetector.

Microstructures
ISSN 2770-2995 (Online)
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