fig5

Figure 5. A: Device simulation results for the target-pristine or target-GuaSCN PSCs by the software Silvaco: Schematic PSC structure with vertical heterojunction used for simulation (left), and energy levels including the conduction band (E_C), the valence band (E_V), hole (E_Fp), and electron (E_Fn) quasi-Fermi levels across the whole devices under the open-circuit condition (right). This figure is quoted with permission from Wang et al.^[90]; B: Schematic of the crystallization mechanism of 2D3D perovskite films with PEABr and PEABr-PEASCN; C: Azimuthally integrated GIWAXS intensity profiles at q = 1 Å^-1. This figure is quoted with permission from Li et al.^[91]; D: Schematic illustration of the impact of PEA-based and PEA/DEA-based films on surface morphology and strain in tin perovskite films; E: 2θ – sin²(ψ) functions derived from grazing-incidence X-ray diffraction (GIXRD) results and their linear fits for PEA-based and PEA/DEA-based films. This figure is quoted with permission from Kang et al.^[92]. PSC: perovskite solar cell; PEA: phenethylammonium; DEA: diethylamine.