REFERENCES
1. Yoon, D. S.; Roh, J. S.; Lee, S. M.; Baik, H. K. Alteration for a diffusion barrier design concept in future high-density dynamic and ferroelectric random access memory devices. Prog. Mater. Sci. 2003, 48, 275-371.
2. Chang, T. C.; Chang, K. C.; Tsai, T. M.; Chu, T. J.; Sze, S. M. Resistance random access memory. Mater. Today. 2016, 19, 254-64.
3. Kim, I. J.; Lee, J. S. Ferroelectric transistors for memory and neuromorphic device applications. Adv. Mater. 2023, 35, e2206864.
4. Kim, S. S.; Yong, S. K.; Kim, W.; et al. Review of semiconductor flash memory devices for material and process issues. Adv. Mater. 2023, 35, e2200659.
5. Migliato, M. G.; Zhao, Y.; Avsar, A.; et al. Logic-in-memory based on an atomically thin semiconductor. Nature 2020, 587, 72-7.
6. Zhao, M.; Gao, B.; Tang, J.; Qian, H.; Wu, H. Reliability of analog resistive switching memory for neuromorphic computing. App. Phys. Rev. 2020, 7, 011301.
7. Li, X.; Liu, J.; Huang, J.; et al. Epitaxial strain enhanced ferroelectric polarization toward a giant tunneling electroresistance. ACS. Nano. 2024, 18, 7989-8001.
8. Li, Y. Z.; Lin, J. L.; Bai, Y.; Li, Y.; Zhang, Z. D.; Wang, Z. J. Ultrahigh-energy storage properties of (PbCa)ZrO3 antiferroelectric thin films via constructing a pyrochlore nanocrystalline structure. ACS. Nano. 2020, 14, 6857-65.
9. Tang, Y. L.; Zhu, Y. L.; Ma, X. L.; et al. Observation of a periodic array of flux-closure quadrants in strained ferroelectric PbTiO3 films. Science 2015, 348, 547-51.
10. Wang, Y. J.; Feng, Y. P.; Zhu, Y. L.; et al. Polar meron lattice in strained oxide ferroelectrics. Nat. Mater. 2020, 19, 881-6.
11. Xue, F.; He, X.; Wang, Z.; et al. Giant ferroelectric resistance switching controlled by a modulatory terminal for low-power neuromorphic in-memory computing. Adv. Mater. 2021, 33, e2008709.
12. Luo, Z.; Wang, Z.; Guan, Z.; et al. High-precision and linear weight updates by subnanosecond pulses in ferroelectric tunnel junction for neuro-inspired computing. Nat. Commun. 2022, 13, 699.
13. Yan, X.; Yan, H.; Liu, G.; et al. Silicon-based epitaxial ferroelectric memristor for high temperature operation in self-assembled vertically aligned BaTiO3-CeO2 films. Nano. Res. 2022, 15, 9654-62.
14. Molinari, A.; Witte, R.; Neelisetty, K. K.; et al. Configurable resistive response in BaTiO3 ferroelectric memristors via electron beam radiation. Adv. Mater. 2020, 32, e1907541.
15. McConville, J. P. V.; Lu, H.; Wang, B.; et al. Ferroelectric domain wall memristor. Adv. Funct. Mater. 2020, 30, 2000109.
16. Ma, C.; Luo, Z.; Huang, W.; et al. Sub-nanosecond memristor based on ferroelectric tunnel junction. Nat. Commun. 2020, 11, 1439.
17. Gabel, M.; Gu, Y. Understanding microscopic operating mechanisms of a van der Waals planar ferroelectric memristor. Adv. Funct. Mater. 2021, 31, 2009999.
18. Müller, M. L.; Becker, M. T.; Strkalj, N.; Macmanus-driscoll, J. L. Schottky-to-ohmic switching in ferroelectric memristors based on semiconducting Hf0.93Y0.07O2 thin films. Appl. Phys. Lett. 2022, 121, 093501.
19. Yang, F.; Bao, Y.; Huang, W.; Li, X.; Chen, Y.; Wang, G. Enhanced energy storage properties of hafnium-modified
20. Tang, Y.; Zhu, Y.; Wu, B.; et al. Periodic polarization waves in a strained, highly polar ultrathin SrTiO3. Nano. Lett. 2021, 21, 6274-81.
21. Mcgilly, L. J.; Sandu, C. S.; Feigl, L.; Damjanovic, D.; Setter, N. Nanoscale defect engineering and the resulting effects on domain wall dynamics in ferroelectric thin films. Adv. Funct. Mater. 2017, 27, 1605196.
22. Gradauskaite, E.; Hunnestad, K. A.; Meier, Q. N.; Meier, D.; Trassin, M. Ferroelectric domain engineering using structural defect ordering. Chem. Mater. 2022, 34, 6468-75.
23. Nataf, G. F.; Guennou, M.; Gregg, J. M.; et al. Domain-wall engineering and topological defects in ferroelectric and ferroelastic materials. Nat. Rev. Phys. 2020, 2, 634-48.
24. Li, C.; Huang, L.; Li, T.; et al. Ultrathin BaTiO3-based ferroelectric tunnel junctions through interface engineering. Nano. Lett. 2015, 15, 2568-73.
25. Guo, R.; Zhou, Y.; Wu, L.; et al. Control of synaptic plasticity learning of ferroelectric tunnel memristor by nanoscale interface engineering. ACS. Appl. Mater. Interfaces. 2018, 10, 12862-9.
26. Chen, D.; Chen, Z.; He, Q.; et al. Interface engineering of domain structures in BiFeO3 thin films. Nano. Lett. 2017, 17, 486-93.
27. Jeon, B. C.; Lee, D.; Lee, M. H.; et al. Flexoelectric effect in the reversal of self-polarization and associated changes in the electronic functional properties of BiFeO3 thin films. Adv. Mater. 2013, 25, 5643-9.
28. Chu, Y. H.; He, Q.; Yang, C. H.; et al. Nanoscale control of domain architectures in BiFeO3 thin films. Nano. Lett. 2009, 9, 1726-30.
29. Lee, D.; Jeon, B. C.; Baek, S. H.; et al. Active control of ferroelectric switching using defect-dipole engineering. Adv. Mater. 2012, 24, 6490-5.
30. Huang, B.; Zhao, X.; Li, X.; et al. Schottky barrier control of self-polarization for a colossal ferroelectric resistive switching. ACS. Nano. 2023, 17, 12347-57.
31. Singh, S.; Khare, N. Electrically tuned photoelectrochemical properties of ferroelectric nanostructure NaNbO3 films. Appl. Phys. Lett. 2017, 110, 152902.
32. Jung, J. H.; Lee, M.; Hong, J. I.; et al. Lead-free NaNbO3 nanowires for a high output piezoelectric nanogenerator. ACS. Nano. 2011, 5, 10041-6.
33. Li, S.; Zhu, Y.; Tang, Y.; et al. Thickness-dependent a/a domain evolution in ferroelectric PbTiO3 films. Acta. Mater. 2017, 131, 123-30.
34. Tang, Y.; Zhu, Y.; Ma, X.; et al. A coherently strained monoclinic [111]PbTiO3 film exhibiting zero poisson’s ratio state. Adv. Funct. Mater. 2019, 29, 1901687.
35. Chen, Y. T.; Tang, Y. L.; Zhu, Y. L.; et al. Periodic vortex-antivortex pairs in tensile strained PbTiO3 films. Appl. Phys. Lett. 2020, 117, 192901.
36. Zheng, N.; Zang, Y.; Li, J.; et al. Perovskite-oxide-based ferroelectric synapses integrated on silicon. Adv. Funct. Mater. 2024, 34, 2316473.
