fig3

From: Defect-induced interfacial modulation for enhanced resistive switching performance in antiferroelectric/ferroelectric heterostructures

Defect-induced interfacial modulation for enhanced resistive switching performance in antiferroelectric/ferroelectric heterostructures

Figure 3. Fatigue and retention characteristics for (NNO/PTO)₃. (A) Fatigue properties of the HRS and LRS for (NNO/PTO)₃. (B) Retention properties of the HRS and LRS with a pulse width of 1 s for (NNO/PTO)₃.

Microstructures

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