fig4
From: Nonvolatile multistate memories in BiFeO3-based nanocomposites designed by phase-field simulations
Figure 4. Demonstration of data writing in a 4 × 4 cell array. (A) Simulated structure of a 4 × 4 cell array, each cell 20 nm × 20 nm with BFO pillar diameter of 8 nm. The switching process is performed using a PFM tip; (B) Design of data storage, where each 8-bit ASCII character is stored by four cells; (C) Phase-field simulation of the data writing process in (B), beginning from an initial poled state with all cells in the “00” state, and then writing each cell sequentially by one or two steps. BFO: BiFeO3; PFM: piezoresponse force microscopy.
