fig2

Figure 2. (A) Schematic diagram of the tableting principle. (B) The finished (F-PEA)₃BiI₆ perovskite wafers with a scale bar of 1 cm. (C) XRD patterns showed the layer structure of the cross-section of the 2D (F-PEA)₃BiI₆ perovskite wafer. (D) Molecular simulations of the tableting process. (E) XRD patterns under different pressures showed the change in diffraction peak intensity of (F-PEA)₃BiI₆ perovskite wafers including (0 0 2) and (3 1 0) planes. (A-E) are quoted with permission from Li et al.^[67]. (F) Temporal evolution of the applied pressure, during pressing of MAPbI₃ powders at a target pressure of 25 MPa. The pressure was adjusted 13 times manually to keep the target pressure level during the shown time span. (G) Normalized pressure relaxations from (F), with the peak value of the relaxation set as time zero. (H) Normalized first pressure relaxation (black circles), with a target pressure of 50 MPa, together with fits using monoexponential (green) and biexponential (orange) decay. (I) Top view SEM images of the pellets pressed at 25 and 100 MPa. (F-I) is quoted with permission from Witt et al.^[68]. (J) Cartoon to visualize material transport during patterning of a coarse-grained perovskite layer via thermal nanoimprint. (K) Sketch of material transport during the initial phase of imprint with a -oriented polycrystalline layer. (L) SEM images of MAPbBr₃ processed by nanoimprinting. (M) Sketches indicating alternating material ejection below linear stamp structures. (J-M) is quoted with permission from Mayer et al.^[77]. (N) Schematic illustration of the growth mechanism of the MAPbI₃ film by the PSS strategy. (N) is quoted with permission from Fu et al.^[78].