fig7

Exploring the underlying mechanisms of ferroelectric behavior in metal-doped aluminum nitride: an in-depth review

Figure 7. ABF-STEM micrograph showing the Pt/Al0.74Sc0.26N/Pt/GaN capacitor stack in cross-section. (A) The inset shows superimposed EDS maps of Pt, Al, and Ga. (B) Atomic structure sketches of M- and N-polar states. (C) Inverted ABF-STEM micrograph sketches of an inclined inversion domain boundary separating M-polar (upper right) and N-polar (lower left) regions, with overlaid (Al,Sc)-N dumbbell schematics indicating polarization direction. (D) Intensity profiles of polarization direction within individual (Al,Sc)-N dumbbells, with arrows indicating profile direction and color-coded polarity: M-polarity = pink, N-polarity = blue[6].

Microstructures
ISSN 2770-2995 (Online)

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