fig3

Exploring the underlying mechanisms of ferroelectric behavior in metal-doped aluminum nitride: an in-depth review

Figure 3. Polarization hysteresis loops for a heterojunction capacitor comprising 250 nm ZnO/200 nm Al0.94B0.06N/100 nm W[24].

Microstructures
ISSN 2770-2995 (Online)

Portico

All published articles are preserved here permanently:

https://www.portico.org/publishers/oae/

Portico

All published articles are preserved here permanently:

https://www.portico.org/publishers/oae/