fig8

Figure 8. BF-TEM cross-sectional images of MIM capacitors annealed at 750 °C, with Ba/Ti ratios of (A) 0.80; (B) 0.92; (C) 1.01; and (D) 1.06. This figure is quoted with permission^[91]; (E) schematic diagram of the KNbO₃ synthesis mechanism via a modified solid-state reaction method; (F) HT-XRD patterns of a 1:1:1 mixture of K₂C₂O₄·H₂O, Nb₂O₅, and urea. This figure is quoted with permission^[92]; (G) Stability limit of SrCo_0.9Nb_0.1O_3-δ; (H) Oxidation stoichiometry of SrCo_0.9Nb_0.1O_3-δ. This figure is quoted with permission^[93]; (I) Correlation between precursor pulse ratio and actual Mn content in RxMnyO₃ thin films, along with the linear relationship between film thickness and ALD cycle number for YxMnyO₃ films; (J) XRD patterns of YbMnO₃ thin films. This figure is quoted with permission^[94]; (K) schematic representation of the phase transformation process of ZnSnO₃ during annealing. This figure is quoted with permission^[95]. BF-TEM: Bright-field transmission electron microscopy; MIM: metal-insulator-metal; HT-XRD: high-temperature X-ray diffraction; ALD: atomic layer deposition; XRD: X-ray diffraction.