fig1

Figure 1. Integration of multiferroic magnetoelectric materials in energy-efficient logic devices. (A and B) In the magnetoelectric spin-orbit logic device, switching the electric polarization (P) of the magnetoelectric layer (BiFeO₃) sets the magnetization state (M) of the adjacent ferromagnetic layer (FM) (A). For the output readout (B), the spin-polarized current (Is) from the FM is injected into a layer with strong spin-orbit coupling (SOC) through a spin-injection layer (SIL). The spin-to-charge conversion results in a charge current Ic. Reprinted from^[3], Copyright 2023 by the American Chemical Society.